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IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

    Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers
     
    Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers
    • Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers
    • Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers
    • Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers
    • Buy cheap IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W from wholesalers

    IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

    Ask Lasest Price
    Brand Name : VISHAY
    Model Number : IRF9640
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 50000PCS
    Delivery Time : STOCK
    • Product Details
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    IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

    IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole


    FEATURES


    • Dynamic dV/dt Rating

    • Repetitive Avalanche Rated

    • P-Channel

    • Fast Switching

    • Ease of Paralleling

    • Simple Drive Requirements

    • Compliant to RoHS Directive 2002/95/EC


    DESCRIPTION


    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


    Product AttributesSelect All
    CategoriesDiscrete Semiconductor Products
     Transistors - FETs, MOSFETs - Single
    ManufacturerVishay Siliconix
    Series-
    PackagingTube
    Part StatusActive
    FET TypeP-Channel
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)200V
    Current - Continuous Drain (Id) @ 25°C11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Rds On (Max) @ Id, Vgs500 mOhm @ 6.6A, 10V
    Vgs(th) (Max) @ Id4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
    Vgs (Max)±20V
    Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
    FET Feature-
    Power Dissipation (Max)125W (Tc)
    Operating Temperature-55°C ~ 150°C (TJ)
    Mounting TypeThrough Hole
    Supplier Device PackageTO-220AB

    IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125WIRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W


    Deli electronics tehcnology co ltd
    www.icmemorychip.com

    Email:sales3@deli-ic.com
    Skype:hkdeli881
    TEL:86-0755-82539981

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