HGTG11N120CND NPT GBT Anti Parallel Hyperfast Diode 43A 1200V

Product Categories

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Contact Now

Add to Cart

HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V

Description :

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.

This is a new member of the MOS gated high voltage switching IGBT family.

IGBTs combine the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT used is the development type TA49291.

The Diode used is the development type TA49189.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies

where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids,

relays and contactors. Formerly Developmental Type TA49303.

Features :

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . .340ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Deli electronics tehcnology Co.,Ltd.
Email:sales3@deli-ic.com
Skype:hkdeli881
Contact: VIVI-CHEN

Product Tags:

IGBT Anti Parallel Hyperfast Diode

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	DELI ELECTRONICS TECHNOLOGY CO.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Explore more General Purpose Rectifier Diode products from this supplier

Find Similar Products By Category:

Electronic Components & Supplies

Hot Searches: