Surface Mount Schottky - Rectifiers SMD Schottky Barrier Rectifier Diodes 3rd Generation

Features:

Max. average forward rectified current, R-load TT = 100/C IFAV : 3 A

Dauergrenzstrom in Einwegschaltung mit R-Last

Repetitive peak forward current f > 15 Hz IFRM : 20 A 2)

Periodischer Spitzenstrom

Peak forward surge current, 50 / 60 Hz half sine-wave TA = 25/C IFSM: 80 / 90 A

Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle

Rating for fusing, t < 10 ms TA = 25/C i2 t 32 A2s

Grenzlastintegral, t < 10 ms

Leakage current – Sperrstrom Tj = 25/C VR = VRRM: IR< 80 :A

Tj = 100/C VR = VRRM, IR < 10.0 mA

Thermal resistance junction to ambient air RthA < 70 K/W 1)

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to terminal RthT < 20 K/W

Wärmewiderstand Sperrschicht – Anschluß

Operating junction temperature – Sperrschichttemperatur Tj: – 50...+150/C

Storage temperature – Lagerungstemperatur TS : – 50...+150/C

Mounted on P.C. board with 50 mm2 copper pads at each terminal

Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluß2

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